| PART |
Description |
Maker |
| NE985100 NE985200 NE985400 |
100 mA, 2 W, K-band power GaAs MESFET
200 mA, 2 W, K-band power GaAs MESFET
400 mA, 2 W, K-band power GaAs MESFET
|
NEC
|
| NE960R27501 NE960R275 |
0.2W X, Ku-BAND POWER GaAs MESFET
|
NEC[NEC]
|
| NE6500379 NE6500379A NE6500379A-T1 |
3W L, S-BAND POWER GaAs MESFET
|
NEC
|
| NE850010000 NE8500199 NE8500100 |
C-BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
NEC[NEC]
|
| NE650107700 |
L/S BAND MEDIUM POWER GaAs MESFET
|
California Eastern Labs
|
| NEZ6472-15D NEZ4450-15DD |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET
|
Electronics Industry Public Company Limited
|
| NE500199 NE500100 |
(NE500100 / NE500199) C-Band Medium Power GaAs MESFET
|
NEC Electronics
|
| NEZ7785-15DL |
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET HERMETIC SEALED, T-65, 2 PIN
|
NEC, Corp.
Electronics Industry Public Company Limited
|
| CF004_06 CF004 CF004-01 CF004-02 CF004-03 |
GaAs Pseudomorphic HEMT and MESFET Chips KA BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
|
Mimix Broadband, Inc.
MIMIX[Mimix Broadband]
|
| CGY4111 |
HiRel L- and S-Band GaAs General Purpose Amplifier
|
Infineon Technologies AG
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
